DS3514 I²C Gamma and VCOM Buffer with EEPROM
DS3514 Description
COM voltage generat
or that supports both real-
time updating as well as multiby
te storage of gamma/V
COM data in on-chip EEPROM memory. An independent 10-bit
DAC, two 10-bit data registe
rs, and four words of EEPROM memory are provided for e
ach individually
addressable gamma or V
COM channel. High-pe
rformance buffer amplifiers are integrated on-chip, providing rail-to-rail, low-power (400µA/gamma channel) operation. The V
COM channel features a high current drive (> 250mA peak) and a fast-settling buffer amplifier optimized to drive the V
COM node of a wide range of
TFT-LCD panels.
Prog
ramming occurs through an I²C-compatible serial interface. Interface performance and flexibility are enhanced by a pair of independently loaded data latches per channel, as well as support for I²C speeds up to 400kHz. The multitable EEPROM memory enables a rich variety of display system enhancements, including support for temperature or light-level dependent gamma tables, enabling of factory or field automated display adjustment, and support for backlight dimming algorithms to reduce system power. Upon power-up and depending on mode, DAC data is selected from EEPROM by the S0/S1
pins or from a fixed memory address.
DS3514 pdf datasheet
DS3514 Key Features
10-Bit Gamma Buffers, 14 Channels
8-Bit VCOM Buffer, 1 Channel
Four 10-bit EEPROM Words per Channel
Low-Power 400 µA/ch Gamma Buffers
I²C-Compatible Serial Interface
Flexible Control from I²C or Pins
9.0V to 15.0V Analog Supply
2.7V to 5.5V Digital Supply
48-Pin TQFN Package (7mm x 7mm)
DS3514 Applications/Uses
Adaptive Gamma and VCOM Adjustment (Real Time by I²C, Select EEPROM Through I²C or S0/S1 Pins
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Industrial Process Control
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TFT-LCD Gamma and VCOM Buffer |